DocumentCode
1190696
Title
Modeling MESFET´s for inter-modulation analysis in RF switches
Author
Virk, Robinder S. ; Maas, Stephen A.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume
4
Issue
11
fYear
1994
Firstpage
376
Lastpage
378
Abstract
This paper describes a new model for a resistive GaAs MESFET and its application to calculations of intermodulation distortion in switches. The model uses an expression for the I/V characteristics of the device whose parameters are fit to the static I/V and its derivatives. This new model provides a reliable means of describing the nonlinear distortion generated by a MESFET switch.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; electric distortion; equivalent circuits; gallium arsenide; intermodulation; semiconductor device models; semiconductor switches; solid-state microwave devices; GaAs; I/V characteristics; IMD; MESFET switch; RF switches; inter-modulation analysis; intermodulation distortion; model; nonlinear distortion; resistive GaAs MESFET; Electrical resistance measurement; Equivalent circuits; FETs; Gallium arsenide; Loss measurement; MESFET circuits; Parasitic capacitance; Radio frequency; Switches; Voltage control;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.329711
Filename
329711
Link To Document