Hybrid MOS-bipolar transistor switching with profiled drive signal

Author

Lazarus, M.J. ; Wilkes, J.

Author_Institution

Sch. of Phys. & Mater., Lancaster Univ., UK

Volume

41

Issue

10

fYear

1994

fDate

10/1/1994 12:00:00 AM

Firstpage

662

Lastpage

665

Abstract

A method for switching MOS-bipolar transistor hybrids has been developed, which improves the transition performance and minimises the base drive power requirements in a split Darlington configuration with low on-state voltage. The type of wave shaping of the input control signal, enables unusually small and high speed MOSFETs to drive exceptionally high base current pulses for fast turn-on of a bipolar power transistor. Since bipolar over-saturation is avoided, the turn-off is also improved

Keywords

MOSFET circuits; bipolar transistor circuits; bipolar transistor switches; driver circuits; field effect transistor switches; power MOSFET; power bipolar transistors; power electronics; power semiconductor switches; switching circuits; bipolar power transistor; high base current pulses; high speed MOSFETs; hybrid MOS-bipolar transistor switching; profiled drive signal; split Darlington configuration; transistor hybrids; Bipolar transistors; Capacitance; Circuit testing; Driver circuits; Impedance; Low voltage; MOSFETs; Pulse shaping methods; Shape control; Switches;

fLanguage

English

Journal_Title

Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on

Publisher

ieee

ISSN

1057-7122

Type

jour

DOI

10.1109/81.329726

Filename

329726