Study on different material parameters on TSV interconnect structures stress and strain under random vibration load

Author

Xiong Guoji ; Huang Chunyue ; Li Tianming ; Liang Ying ; Tang Wenliang ; Wu Song ; Li Chunquan ; Ning Zhong Ping

Author_Institution

Sch. of Electro-Mech. Eng., Guilin Univ. of Electron. Technol., Guilin, China

fYear

2014

fDate

12-15 Aug. 2014

Firstpage

1522

Lastpage

1525

Abstract

The 3D finite element analysis models of 3D-TSV interconnect structure were developed. By using ANSYS the finite element analysis of the stress and strain distribution in the model was performed under random vibration load. Comparative analysis of the stress and strain of TSV interconnect structure between the micro-bump materials are copper and SAC387. And also comparative analysis the stress and strain by four different solder materials.

Keywords

copper; finite element analysis; integrated circuit interconnections; integrated circuit modelling; stress-strain relations; three-dimensional integrated circuits; 3D finite element analysis model; 3D-TSV interconnect structure; ANSYS; SAC387; copper; material parameters; microbump materials; random vibration load; solder materials; stress-strain distribution; Finite element analysis; Materials; Reliability; Strain; Stress; Through-silicon vias; Vibrations; 3D-TSV interconnect structure; finite element analysis; random vibration analysis; stress and strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2014 15th International Conference on

Conference_Location

Chengdu

Type

conf

DOI

10.1109/ICEPT.2014.6922943

Filename

6922943