The Einstein relation for degenerate semiconductors with nonuniform band structures

Author

Mohammad, S.Noor ; Bemis, Andrew V.

Author_Institution

IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA

Volume

39

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2826

Lastpage

2828

Abstract

Modification of the Einstein equation for semiconductors with nonparabolic energy bands and doped nonuniformly with impurity atoms is suggested. The suggestion is based on a new approximation of the Fermi-Dirac integral of order 1/2, namely, F_1/2(η_n), where η_n is the reduced Fermi level for electrons. The relation reduces to that for semiconductors with parabolic energy bands and doped uniformly with impurity atoms under appropriate boundary conditions. A comparison of the calculated and exact results for F_1/2(η) is found to be very encouraging

Keywords

Fermi level; band structure of crystalline semiconductors and insulators; carrier mobility; degenerate semiconductors; quantum statistical mechanics; Fermi level; Fermi-Dirac integral; approximation; degenerate semiconductors; impurity atoms; nonparabolic energy bands; nonuniform band structures; Boundary conditions; Electron mobility; Erbium; FETs; Integral equations; Iterative methods; Photovoltaic cells; Semiconductor impurities; Temperature; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.168739

Filename

168739