• DocumentCode
    11911
  • Title

    Design for Manufacturing With Emerging Nanolithography

  • Author

    Pan, David Z. ; Bei Yu ; Jhih-Rong Gao

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
  • Volume
    32
  • Issue
    10
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    1453
  • Lastpage
    1472
  • Abstract
    In this paper, we survey key design for manufacturing issues for extreme scaling with emerging nanolithography technologies, including double/multiple patterning lithography, extreme ultraviolet lithography, and electron-beam lithography. These nanolithography and nanopatterning technologies have different manufacturing processes and their unique challenges to very large scale integration (VLSI) physical design, mask synthesis, and so on. It is essential to have close VLSI design and underlying process technology co-optimization to achieve high product quality (power/performance, etc.) and yield while making future scaling cost-effective and worthwhile. Recent results and examples will be discussed to show the enablement and effectiveness of such design and process integration, including lithography model/analysis, mask synthesis, and lithography friendly physical design.
  • Keywords
    VLSI; design for manufacture; electron beam lithography; masks; nanolithography; nanopatterning; optimisation; ultraviolet lithography; VLSI physical design; design for manufacturing; double-multiple patterning lithography; electron beam lithography; extreme scaling; extreme ultraviolet lithography; mask synthesis; nanolithography; nanopatterning; process technology co-optimization; very large scale integration; Layout; Logic gates; Nanolithography; Pattern matching; Ultraviolet sources; Design for manufacturing; EUV lithography (EUVL); double patterning; e-beam lithography (EBL); multiple patterning; nanolithography; physical design;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.2013.2276751
  • Filename
    6601025