DocumentCode
11911
Title
Design for Manufacturing With Emerging Nanolithography
Author
Pan, David Z. ; Bei Yu ; Jhih-Rong Gao
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Volume
32
Issue
10
fYear
2013
fDate
Oct. 2013
Firstpage
1453
Lastpage
1472
Abstract
In this paper, we survey key design for manufacturing issues for extreme scaling with emerging nanolithography technologies, including double/multiple patterning lithography, extreme ultraviolet lithography, and electron-beam lithography. These nanolithography and nanopatterning technologies have different manufacturing processes and their unique challenges to very large scale integration (VLSI) physical design, mask synthesis, and so on. It is essential to have close VLSI design and underlying process technology co-optimization to achieve high product quality (power/performance, etc.) and yield while making future scaling cost-effective and worthwhile. Recent results and examples will be discussed to show the enablement and effectiveness of such design and process integration, including lithography model/analysis, mask synthesis, and lithography friendly physical design.
Keywords
VLSI; design for manufacture; electron beam lithography; masks; nanolithography; nanopatterning; optimisation; ultraviolet lithography; VLSI physical design; design for manufacturing; double-multiple patterning lithography; electron beam lithography; extreme scaling; extreme ultraviolet lithography; mask synthesis; nanolithography; nanopatterning; process technology co-optimization; very large scale integration; Layout; Logic gates; Nanolithography; Pattern matching; Ultraviolet sources; Design for manufacturing; EUV lithography (EUVL); double patterning; e-beam lithography (EBL); multiple patterning; nanolithography; physical design;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.2013.2276751
Filename
6601025
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