Title :
AlGaAs/GaAs double-heterostructure-emitter bipolar transistor (DHEBT)
Author :
Liu, Wen-Chau ; Guo, Der-Feng ; Lour, Wen-Shiung
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
fDate :
12/1/1992 12:00:00 AM
Abstract :
An AlGaAs/GaAs double-heterostructure-emitter bipolar transistor (DHEBT) fabricated by molecular beam epitaxy (MBE) is presented. The use of a structure symmetrical with respect to the base layer results in bidirectional transistor and switching behavior. Due to a significant area difference between emitter-base and base-collector junction, an asymmetrical property is observed. With an emitter edge-thinning design, the transistor performance may be further improved. A common-emitter current gain of up to 140 with a negligible collector-emitter offset voltage (~40 mV) is achieved. A bidirectional S-shaped negative-differential-resistance (NDA) phenomenon occurs at high V CE bias voltage. The temperature dependence of the NDR is investigated. A three-terminal-controlled switching device is found to perform well when the control current is introduced into the base electrode
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; negative resistance; AlGaAs-GaAs; DHEBT; MBE; asymmetrical property; base electrode; bidirectional S-shaped NDR; bidirectional switching behaviour; bipolar transistor; common-emitter current gain; control current; double-heterostructure-emitter; emitter edge-thinning design; molecular beam epitaxy; negative-differential-resistance; temperature dependence; three-terminal-controlled switching device; Associate members; Bipolar transistors; DH-HEMTs; Electrodes; Etching; Gallium arsenide; Molecular beam epitaxial growth; Switching circuits; Temperature dependence; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
