Bipolar - JFET - MOSFET negative resistance devices

Author

Chua, Leon O. ; Yu, Juebang ; Yu, Youying

Volume

32

Issue

1

fYear

1985

fDate

1/1/1985 12:00:00 AM

Firstpage

46

Lastpage

61

Abstract

A systematic method is given for generating negative-resistance circuits made of 2 transistors and linear positive resistors only. The 2 transistors may be bioolar ( $n-p-n$ or $p-n-p$ ), $JFET$ ( $n$ -channel or p-channel), $MOSFET$ ( $n$ -channel or $p$ -channel), or their combinations. Since the circuits do not require an internal power supply, they are passive and can be integrated as a two-terminal device in monolithic form. Two algorithms are given for generating a negative-resistance device which exhibits either a type- $N$ $\\upsilon - i$ characteristic similar to that of a tunnel diode, or a type- $S$ $\\upsilon -i$ characteristic similar to that of a four-layered $p-n-p-n$ diode. Hundreds of new and potentially useful negative resistance devices have been discovered. A selected catalog of many such prototype negative-resistance devices is included for future applications.

Keywords

Bipolar transistors; JFETs; MOSFETs; Negative-resistance devices; Nonlinear circuits; Character generation; Electron tubes; MOSFET circuits; Mice; Physics; Power engineering and energy; Power supplies; Resistors; Semiconductor diodes; Solid state circuits;

fLanguage

English

Journal_Title

Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0098-4094

Type

jour

DOI

10.1109/TCS.1985.1085599

Filename

1085599