Title :
Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET
Author :
Adivarahan, V. ; Gaevski, M. ; Koudymov, A. ; Yang, J. ; Simin, G. ; Khan, M.Asif
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC
fDate :
3/1/2007 12:00:00 AM
Abstract :
We describe a novel AlGaN/InGaN/GaN metal-oxide-semiconductor double heterostructure field-effect transistor with peak drain current of 1.67 A/mm and 2-GHz RF power of 15 W/mm at a drain bias as low as 35 V. These high values of peak currents and high RF powers at relatively low drain bias resulted from an additional selective area doping of the access regions during the device fabrication. The RF-output power of 12.5 W/mm (at a drain bias of VD=30 V) was stable within a 0.5-dB variations during a 100-h continuous-wave stress test
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; semiconductor doping; 100 hrs; 2 GHz; 30 V; AlGaN-InGaN-GaN; continuous-wave stress test; device fabrication; metal-oxide-semiconductor double heterostructure field-effect transistor; selective area doping; Aluminum gallium nitride; Doping; Fabrication; Gallium nitride; HEMTs; Knee; MODFETs; Power generation; Radio frequency; Voltage; Double heterostructure field-effect transistors; GaN HEMT; GaN HFET; MOS; selective doping;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.891386
