Title :
Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope
Author :
Masahara, Meishoku ; Surdeanu, Radu ; Witters, Liesbeth ; Doornbos, Gerben ; Nguyen, Viet H. ; Van den Bosch, Geert ; Vrancken, Christa ; Devriendt, Katia ; Neuilly, Francois ; Kunnen, Eddy ; Jurczak, Malgorzata ; Biesemans, Serge
Author_Institution :
IMEC, Leuven
fDate :
3/1/2007 12:00:00 AM
Abstract :
Flexibly controllable threshold-voltage (Vth) asymmetric gate-oxide thickness (Tox) four-terminal (4T) FinFETs with HfO2 [equivalentoxidethickness(EOT)=1.4 nm] for the drive gate and HfO2+thick SiO2 (EOT=6.4-9.4 nm) for the Vth-control gate have been successfully fabricated by utilizing ion-bombardment-enhanced etching process. Owing to the slightly thick Vth-control gate oxide, the subthreshold slope (S) is significantly improved as compared to the symmetrically thin Tox 4T-FinFETs. As a result, the asymmetric Tox 4T-FinFETs gain higher Ion than that for the symmetrically thin Tox 4T-FinFETs under the same Ioff conditions
Keywords :
MOSFET; etching; hafnium compounds; silicon compounds; voltage control; 1.4 nm; 6.4 to 9.4 nm; HfO2; SiO2; asymmetric gate-oxide thickness; equivalent oxide thickness; flexible threshold voltage; four-terminal FinFET; ion-bombardment-enhanced etching process; subthreshold slope; threshold voltage-control gate oxide; Circuit optimization; Etching; Fabrication; FinFETs; Hafnium oxide; Integrated circuit technology; Microelectronics; Thickness control; Threshold voltage; Voltage control; Asymmetric gate-oxide thickness; FinFET; four-terminal (4T) FinFET; ion-bombardment-enhanced etching (IBEE); subthreshold slope; threshold-voltage control;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.891303
