• DocumentCode
    1191624
  • Title

    Fluorine Passivation in Gate Stacks of Poly- \\hbox {Si}/\\hbox {TaN}/\\hbox {HfO}_{2} (and \\hbox {HfSiON}/\</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Zhang, M.H. ; Zhu, F. ; Kim, H.S. ; Ok, I.J. ; Lee, Jack C.</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Texas Mater. Inst., Univ. of Texas, Austin, TX</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>28</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>3</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2007</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fDate</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>3/1/2007 12:00:00 AM</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>195</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>197</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Fluorine passivation in poly-Si/TaN/HfO<sub>2</sub>/p-Si and poly-Si/TaN/HfSiON/HfO<sub>2</sub>/p-Si gate stacks with varying TaN thickness through gate ion implantation has been studied. It has been found that when TaN thickness was less than 15 nm, mobility and subthreshold swing improved significantly in HfO<sub>2</sub> nMOSFETs; while there was little performance improvement in HfSiON/HfO<sub>2</sub> nMOSFETs due to the blocking of F atoms by the HfSiON layer in gate dielectrics, as has been proved by the electron energy loss spectroscopy mapping</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MOSFET; fluorine; hafnium compounds; ion implantation; passivation; silicon compounds; tantalum compounds; HfSiON-HfO<sub>2</sub>-Si; Si-TaN-HfO<sub>2</sub>; electron energy loss spectroscopy mapping; fluorine passivation; gate dielectrics; gate stacks; ion implantation; nMOSFET; Atomic layer deposition; Dielectric losses; Electrochemical impedance spectroscopy; Electron mobility; Energy loss; Hafnium oxide; Ion implantation; MOSFETs; Passivation; Performance loss; <formula formulatype=$hbox{HfO}_{2}$; $hbox{HfSiON}/hbox{HfO}_{2}$; Fluorine; TaN; gate implantation; high-$kappa$;

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.890078
  • Filename
    4114590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1191624