Title :
On the channel-length dependence of the hot-carrier degradation of n-channel MOSFETs
Author :
Bellens, Rudi ; Heremans, Paul ; Groeseneken, Guido ; Maes, Herman E.
Author_Institution :
Interuniv. Microelectron. Center, Leuven, Belgium
Abstract :
The channel-length dependence of lifetime plots is analyzed. It is shown that no unique tau *I/sub d/ versus I/sub sub//I/sub d/ relation can be obtained when threshold-voltage shifts are used for measuring the lifetime. In contrast, when using charge pumping as a monitor for the degradation, the lifetime plot for a given technology proves to be independent of the channel length.<>
Keywords :
insulated gate field effect transistors; life testing; reliability; semiconductor device testing; channel-length dependence; charge pumping measurement; hot-carrier degradation; lifetime plots; n-channel MOSFETs; threshold voltage shift measurement; Charge pumps; Current measurement; Degradation; Electron traps; Hot carriers; MOSFETs; Pulse measurements; Stress; Threshold voltage; Time measurement;
Journal_Title :
Electron Device Letters, IEEE
