• DocumentCode
    1191870
  • Title

    A Low-Spurious Low-Power 12-bit 160-MS/s DAC in 90-nm CMOS for Baseband Wireless Transmitter

  • Author

    Seo, Dongwon ; McAllister, Gene H.

  • Author_Institution
    Qualcomm Inc., San Diego, CA, USA
  • Volume
    42
  • Issue
    3
  • fYear
    2007
  • fDate
    3/1/2007 12:00:00 AM
  • Firstpage
    486
  • Lastpage
    495
  • Abstract
    A low-spurious low-power 12-bit 160-MS/s digital to analog converter (DAC) for baseband wireless transmitter is proposed and demonstrated. Degenerated current switches are introduced and benefits of using them are discussed. Mismatch behavior under packaging-induced die stress is also presented. The mobility shift caused by package stress inherited from a thin-die is a dominant source of I/Q mismatch. A 2-channel I/Q DAC core consumes 4 mA with a 1.3/2.6 V dual supply. The 0.13 mm2 I/Q DAC core fabricated in 90-nm digital CMOS process with a highly-integrated digital processor achieves 74 dB SFDR, 55 dB SNDR, and -73 dB THD for a 975 kHz sinusoid at 153.6 MS/s sample rate.
  • Keywords
    CMOS integrated circuits; digital-analogue conversion; low-power electronics; radio transmitters; 1.3 V; 2.6 V; 4 mA; 90 nm; 975 kHz; CMOS; DAC; I/Q mismatch; baseband wireless transmitter; current switches; low power electronics; mismatch behavior; mobility shift; packaging induced die stress; shaped centroid; Baseband; Circuits; Digital-analog conversion; Low pass filters; Packaging; Power harmonic filters; Signal to noise ratio; Stress; Switches; Transmitters; Degenerated current switch; I/Q mismatch; digital-to-analog converter (DAC); package stress; shaped centroid;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2006.891722
  • Filename
    4114765