Title :
A 20-Gb/s Simultaneous Bidirectional Transceiver Using a Resistor-Transconductor Hybrid in 0.11-
CMOS
Author :
Tomita, Yasumoto ; Tamura, Hirotaka ; Kibune, Masaya ; Ogawa, Junji ; Gotoh, Kohtaro ; Kuroda, Tadahiro
Author_Institution :
Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
fDate :
3/1/2007 12:00:00 AM
Abstract :
This paper presents a 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11-mum CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10-12. The area and power overhead due to the hybrid are 0.002 mm2 and 7 mW, and correspond to 0.2% and 3% of the total transceiver area and power consumption.
Keywords :
CMOS integrated circuits; error statistics; resistors; transceivers; 0.11 micron; 20 Gbit/s; 260 mW; 7 mW; CMOS technology; bidirectional transceiver; bit error rate; differential pair; power overhead; resistor-transconductor hybrid; signal line voltage; Bandwidth; Bit error rate; Driver circuits; Educational technology; Energy consumption; Moore´s Law; Optical devices; Optical transmitters; Transceivers; Voltage; Bidirectional; CMOS; hybrid; low-power; transceiver;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.891719