• DocumentCode
    1192030
  • Title

    Influence of O2/Ar ratio on properties of transparent conductive tantalum-doped ZnO films

  • Author

    Cao, Fei ; Wang, Yannan ; Liu, Deming

  • Author_Institution
    Coll. of Electron. Sci. & Eng., Jilin Univ., Changchun
  • Volume
    45
  • Issue
    6
  • fYear
    2009
  • Firstpage
    324
  • Lastpage
    326
  • Abstract
    Tantalum-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300degC. The influence of O2/Ar ratio on the structural, electrical, and optical properties of the as-deposited films is investigated. The lowest resistivity of 4.1times10-4 Omegacm is obtained from the film prepared at the O2/Ar ratio of 1/12. The average optical transmittance of the films is over 90%.
  • Keywords
    II-VI semiconductors; electrical conductivity; electrical resistivity; glass; semiconductor doping; semiconductor thin films; sputter deposition; tantalum; wide band gap semiconductors; zinc compounds; O2/Ar ratio; ZnO:Ta; electrical properties; glass substrates; optical properties; optical transmittance; radio frequency sputtering; resistivity; structural properties; temperature 300 C; transparent conductive films;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.3717
  • Filename
    4800393
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1192030