Title :
InGaP/AlInGaP quantum well surface normal modulators for visible wavelengths
Author :
Blum, Oliver ; Fritz, I.J. ; Shul, R.J. ; Schneider, R.P. ; Howard, A.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
fDate :
10/27/1994 12:00:00 AM
Abstract :
An InGaP/AlInGaP, surface normal multiquantum well modulator operating at visible wavelengths is reported for the first time. Application of -6 V perpendicular to the plane of the quantum wells produces a 15% change in transmission at 645 nm, caused by a change in absorption in excess of 2900 cm-1
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium compounds; indium compounds; light absorption; optical modulation; semiconductor quantum wells; -6 V; 645 nm; InGaP-AlInGaP; InGaP/AlInGaP quantum well; light absorption; multiquantum well modulator; surface normal modulators; visible wavelengths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941241
