• DocumentCode
    1192092
  • Title

    InGaP/AlInGaP quantum well surface normal modulators for visible wavelengths

  • Author

    Blum, Oliver ; Fritz, I.J. ; Shul, R.J. ; Schneider, R.P. ; Howard, A.J.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM
  • Volume
    30
  • Issue
    22
  • fYear
    1994
  • fDate
    10/27/1994 12:00:00 AM
  • Firstpage
    1885
  • Lastpage
    1887
  • Abstract
    An InGaP/AlInGaP, surface normal multiquantum well modulator operating at visible wavelengths is reported for the first time. Application of -6 V perpendicular to the plane of the quantum wells produces a 15% change in transmission at 645 nm, caused by a change in absorption in excess of 2900 cm-1
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium compounds; indium compounds; light absorption; optical modulation; semiconductor quantum wells; -6 V; 645 nm; InGaP-AlInGaP; InGaP/AlInGaP quantum well; light absorption; multiquantum well modulator; surface normal modulators; visible wavelengths;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941241
  • Filename
    330006
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1192092