Title :
Monolithically integrated silicon nMOS pin photoreceiver
Author :
He, Yu S. ; Garrett, L.D. ; Lee, Ko-Hsin ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
fDate :
10/27/1994 12:00:00 AM
Abstract :
A monolithic Si optical receiver is reported that consists of an Si nMOS preamplifier and a novel lateral Si pin photodiode. The Si photodiode has a bandwidth of 900 MHz and a responsivity of 0.48 A/W at 870 nm. The optical receiver has demonstrated open-eye operation to 370 Mbit/s with 3 μA of signal photocurrent
Keywords :
MOS integrated circuits; elemental semiconductors; integrated optoelectronics; optical fibres; optical receivers; p-i-n photodiodes; preamplifiers; silicon; 3 muA; 370 Mbit/s; 870 nm; 900 MHz; Si; nMOS pin photoreceiver; open-eye operation; optical receiver; preamplifier; responsivity; signal photocurrent;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941268
