DocumentCode
1192162
Title
Low-threshold 630 nm-band AlGaInP multiquantum-well laser diodes grown on misoriented substrates
Author
Shono, M. ; Hamada, Hiroyuki ; Honda, Shogo ; Hiroyama, R. ; Yodoshi, K. ; Yamaguchi, Toru
Author_Institution
Sanyo Electr. Co., Osaka, Japan
Volume
28
Issue
10
fYear
1992
fDate
5/7/1992 12:00:00 AM
Firstpage
905
Lastpage
906
Abstract
Low-threshold AlGaInP ( lambda L=635.6 nm) multiquantum-well laser diodes have been successfully fabricated by MOCVD using
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; laser transitions; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 20 degC; 350 micron; 5 micron; 57 mA; 630 to 635.6 nm; AlGaInP; GaAs; MOCVD; cavity length; laser diodes; misoriented substrates; multiquantum-well; semiconductor lasers; stripe width; threshold current; transverse-mode stabilised;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920574
Filename
137181
Link To Document