• DocumentCode
    1192163
  • Title

    Reactive ion etching of gallium nitride using hydrogen bromide plasmas

  • Author

    Adesida, I. ; Asif Khan, M. ; Kuznia, J.N.

  • Volume
    30
  • Issue
    22
  • fYear
    1994
  • fDate
    10/27/1994 12:00:00 AM
  • Firstpage
    1895
  • Lastpage
    1897
  • Abstract
    The characteristics of the reactive ion etching (RIE) of gallium nitride (GaN) have been investigated using HBr, 1:1 HBr:Ar, and 1:1 HBr:H2 plasmas. Etch rates were found to increase with plasma self-bias voltage for all gas mixtures exceeding 60 nm/min at -400 V for pure HBr. Higher etch rates were obtained for pure HBr than for HBr mixtures with Ar and H2. Chamber pressure was also found to slightly affect etch rates for the pressure ranges investigated. The anisotropy of etched profiles was found to improve with increasing pressure. Smooth etched surfaces are also demonstrated
  • Keywords
    gallium compounds; plasma applications; semiconductor technology; sputter etching; -400 V; 1:1 HBr:Ar plasma; 1:1 HBr:H2 plasma; GaN; HBr; HBr plasma; HBr-Ar; HBr-H2; RIE; chamber pressure; etch rates; etched profile anisotropy; gas mixtures; plasma self-bias voltage; reactive ion etching; smooth etched surfaces;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941247
  • Filename
    330013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1192163