DocumentCode :
1192214
Title :
Negative differential resistance of GaAs/AlxGa1-xAs multiquantum well structures under high power photoexcitation: structure optimisation for an oscillator
Author :
Goswami, Suparna ; Davis, Lisa ; Hong, Seong-Kwan ; Singh, Jaskirat ; Bhattacharya, P.K. ; Haddad, G.I.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Volume :
28
Issue :
10
fYear :
1992
fDate :
5/7/1992 12:00:00 AM
Firstpage :
915
Lastpage :
916
Abstract :
A study is presented of the photocurrent behaviour of p-i-n diodes having GaAs/AlxGa1-xAs MQW absorption regions for varying incident power, incident wavelength and barrier height, given by the Al fraction x. Optimum results for applications in high power oscillators are expected to be obtained for 0.10.15Ga0.85As barriers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; negative resistance; p-i-n diodes; photoconductivity; photoelectric devices; semiconductor quantum wells; GaAs-Al 0.15Ga 0.85As; MQW absorption regions; NDR; barrier height; high power oscillators; high power photoexcitation; incident power; incident wavelength; multiquantum well structures; negative differential resistance; optically controlled oscillators; p-i-n diodes; performance characteristics; photocurrent behaviour; structure optimisation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920580
Filename :
137187
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1192214
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