High-speed, 100+W RF switches using GaAs MMICs

Author

Katzin, Peter ; Bedard, Brian E. ; Shifrin, Mitchell B. ; Ayasli, Yalcin

Author_Institution

Hittite Microwave Corp., Woburn, MA, USA

Volume

40

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

1989

Lastpage

1996

Abstract

A low-loss, inductive gate bias network structure which allows a very high stacking level of FET devices for high-power RF switching applications is reported. The design, implementation, and performance of S- and C-band SPDT switches based on this structure are described. Multiple GaAs MMIC chips integrated into a suspended-substrate hybrid circuit are used. At S-band, switch risetimes/falltimes of less than 40 ns and an RF power handling capability of 300 W CW have been demonstrated. This input signal level could be maintained during the switch state transitions (hot-switching), while being switched between the two output ports at rates of up to 500 kHz

Keywords

III-V semiconductors; MMIC; gallium arsenide; hybrid integrated circuits; semiconductor switches; 100 to 300 W; 40 ns; 500 kHz; C-band; FET devices; GaAs; MMIC chips; RF power handling capability; S-band; SPDT switches; high-power RF switching; high-speed switch; hot-switching; hybrid circuit; inductive gate bias network; low-loss; suspended-substrate; FETs; Gallium arsenide; MESFETs; MMICs; P-i-n diodes; Radio frequency; Silicon; Stacking; Switches; Testing;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.168755

Filename

168755