Growth and physical properties of Al doped Ca3NbGa3Si2O14 piezoelectric single crystals

Author

Yokota, Yuji ; Kamada, K. ; Kudo, Takahiro ; Ohashi, Yoshimasa ; Medvedev, Alexander ; Kurosawa, Shunsuke ; Yoshikawa, Akira

Author_Institution

New Ind. Creation Hatchery Center (NICHe), Tohoku Univ., Sendai, Japan

fYear

2014

fDate

12-16 May 2014

Firstpage

1

Lastpage

4

Abstract

Ca₃Nb(Ga_1-xAl_x)₃Si₂O₁₄(CNGAS) crystals with various Al concentrations were grown by a micro-pulling-down (μ-PD) method and their crystal structures, chemical compositions, crystallinities were investigated. CNGAS crystals with x = 0.2, 0.4 and 0.6 indicated a single phase of langasite-type structure and the crystals with x = 0.8 and 1 included some secondary phases in addition to the langasite-type phase by the powder X-ray diffraction measurements. Lattice parameters, a and c-axes lengths, of the langasite-type phase systematically decreased with an increase of Al concentration.

Keywords

X-ray diffraction; aluminium; calcium compounds; chemical analysis; crystal growth from melt; crystal structure; electrical resistivity; gallium compounds; lattice constants; niobium compounds; piezoelectric materials; Ca₃NbGa₃Si₂O₁₄:Al; c-axes lengths; chemical compositions; crystal structures; crystallinities; electrical resistivity; langasite-type structure; lattice parameters; micropulling-down method; piezoelectric CNGAS single crystals; powder X-ray diffraction measurements; Chemicals; Crystals; Doping; Powders; Resistance; Temperature measurement; X-ray scattering; Ca3NbGa3Si2O14; Piezoelectric crystal; Single Crystal;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices & Workshop on Piezoresponse Force Microscopy (ISAF/IWATMD/PFM), 2014 Joint IEEE International Symposium on the

Conference_Location

State College, PA

Type

conf

DOI

10.1109/ISAF.2014.6923019

Filename

6923019