• DocumentCode
    1192332
  • Title

    Quantum well laser with single InAs monolayer in active region

  • Author

    Dotor, M.L. ; Huertas, P. ; Melendez, Jaime ; Mazuelas, A. ; Garriga, Martin ; Golmayo, D. ; Briones, F.

  • Author_Institution
    Centro Nacional de Microelectron., Madrid, Spain
  • Volume
    28
  • Issue
    10
  • fYear
    1992
  • fDate
    5/7/1992 12:00:00 AM
  • Firstpage
    935
  • Lastpage
    937
  • Abstract
    A single monolayer thick InAs quantum well laser structure has been grown at low substrate temperature by atomic layer molecular beam epitaxy (ALMBE). The laser has an emission wavelength of approximately 884 nm and a threshold current density of 1.97 kA/cm2 at room temperature. This value is lower than values obtained for other monolayer thick quantum well lasers, and it demonstrates the device quality of epitaxial layers grown at 350 degrees C by ALMBE.
  • Keywords
    III-V semiconductors; atomic layer epitaxial growth; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 350 C; 884 nm; ALMBE; InAs quantum well laser; atomic layer molecular beam epitaxy; emission wavelength; monolayer thick quantum well lasers; room temperature; semiconductors; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920592
  • Filename
    137199
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1192332