Room-temperature operation of MOCVD-grown GaInAs/InP strained-layer multiquantum well lasers in 1.8 mu m range

Author

Forouhar, S. ; Larsson, A. ; Ksendzov, A. ; Lang, Robert J. ; Scott, M.D.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

28

Issue

10

fYear

1992

fDate

5/7/1992 12:00:00 AM

Firstpage

945

Lastpage

947

Abstract

The first successful room-temperature pulsed operation is reported of InGaAs strained layer multiquantum well (SL-MQW) injection lasers grown by MOVPE on InP substrates in the 1.8 mu m range. The threshold current density and the external differential quantum efficiency of the 10 mu m wide ridge waveguide lasers were 2.5 kA/cm² (cavity length=1 mm) and 5% (cavity length=400 mu m), respectively. Broad-area lasers, 100 mu m wide and 1 mm long, had a reverse leakage current of less than 10 mu A at -1 V indicating high quality of the epitaxial layers.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1 V; 1.8 micron; 10 muA; 10 to 1000 micron; 5 percent; GaInAs-InP; InP substrates; MOVPE; cavity length; epitaxial layers; external differential quantum efficiency; injection lasers; multiquantum well lasers; reverse leakage current; ridge waveguide lasers; room-temperature pulsed operation; semiconductors; strained layer multiquantum well; threshold current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19920599

Filename

137206