Design and Characterization of CMOS/SOI Image Sensors

Author

Brouk, Igor ; Alameh, Kamal ; Nemirovsky, Yael

Author_Institution

Dept. of Electr. Eng, Israel Inst. of Technol., Haifa

Volume

54

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

468

Lastpage

475

Abstract

The design, operation, and characterization of CMOS imagers implemented using: 1) "regular" CMOS wafers with a 0.5-mum CMOS analog process; 2) "regular" CMOS wafers with a 0.35-mum CMOS analog process; and 3) silicon-on-insulator (SOI) wafers in conjunction with a 0.35-mum CMOS analog process, are discussed in this paper. The performances of the studied imagers are compared in terms of quantum efficiency, dark current, and optical bandwidth. It is found that there is strong dependence of quantum efficiency of the photodiodes on the architecture of the image sensor. The results of this paper are useful for designing and modeling CMOS/SOI image sensors

Keywords

CMOS image sensors; integrated circuit design; silicon-on-insulator; 0.35 micron; 0.5 micron; CMOS analog process; CMOS image sensors; CMOS wafers; SOI; dark current; optical bandwidth; photodiodes; quantum efficiency; silicon-on-insulator wafers; CMOS image sensors; CMOS process; CMOS technology; Cameras; Image sensors; Integrated circuit technology; Isolation technology; Photodiodes; Silicon on insulator technology; Substrates; CMOS integrated circuits; image sensors; photodiodes; silicon-on-insulator (SOI) technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.890585

Filename

4114832