Simulation Results for Nanoscale Field Effect Diode

Using the PISCES-IIb semiconductor drift-diffusion solver, we have simulated the current-voltage (I-V) curve of a nanoscale field-effect diode (FED) with a gate length of 75 nm and a gate oxide thickness of 2 nm. Whereas devices longer than 100 nm provide I_ON/I_OFF ratios that are larger than those of comparable silicon-on-insulator MOSFETs (SOI-MOSFETs), the 75-nm device provides a very poor I_ON/IOFF ratio. A modified version of an FED is proposed, which provides an I_ON/I_OFF ratio that is an order of magnitude larger than that of a comparable SOI-MOSFET for portions of its I-V curve. It appears that the FED can be considered as a viable structure for some digital circuits at these device lengths, provided that minor modifications are made to the regular CMOS process