Compact Analytical Threshold-Voltage Model of Nanoscale Fully Depleted Strained-Si on Silicon–Germanium-on-Insu lator (SGOI) MOSFETs

Author

Venkataraman, Vivek ; Nawal, Susheel ; Kumar, M. Jagadesh

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi

Volume

54

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

554

Lastpage

562

Abstract

In this paper, a physically based analytical threshold-voltage model is developed for nanoscale strained-Si on silicon-germanium-on-insulator MOSFETs for the first time, taking into account short-channel effects. The model is derived by solving the 2-D Poisson equation in strained-Si and SiGe layers. The effects of various important device parameters like strain (Ge mole fraction in the SiGe layer), body doping, gate workfunction, strained-Si thin film and SiGe layer thickness, etc., has been considered. We have demonstrated that increasing strain in order to enhance device performance can lead to undesirable threshold-voltage rolloff. The model is found to agree well with the 2-D simulation results

Keywords

Ge-Si alloys; MOSFET; Poisson equation; semiconductor device models; silicon-on-insulator; 2D Poisson equation; 2D modeling; SGOI; SiGe; nanoscale; short channel effects; silicon germanium on insulator; strained SOI MOSFET; threshold voltage; Analytical models; Capacitive sensors; Germanium silicon alloys; MOSFETs; Poisson equations; Predictive models; Semiconductor process modeling; Silicon germanium; Thin film devices; Threshold voltage; 2-D modeling; Nanoscale; short-channel effects; silicon-germanium-on-insulator (SGOI); simulation; strain; strained-SOI MOSFET; threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.890369

Filename

4114865