Title :
Characterization of diode detectors used in six-port reflectometers
Author :
Bergeault, E. ; Huyart, B. ; Geneves, G. ; Jallet, L.
Author_Institution :
Telecom Paris, France
fDate :
12/1/1991 12:00:00 AM
Abstract :
A method for characterizing in situ the diodes used as power detectors in six-port network analyzers is presented. The method requires only two unknown loads which are connected at the measurement ports. Measurement results obtained for one-port and two-port devices with a dual six-port realized in the 2-18-GHz frequency range are reported. In order to show the influence of frequency, these results are compared to those obtained using a midband characterization of the diode detectors
Keywords :
Schottky-barrier diodes; characteristics measurement; microwave detectors; microwave reflectometry; network analysers; semiconductor device testing; 2 to 18 GHz; Schottky barrier diodes; diode detectors; dual six-port; linearisation; one-port devices; power detectors; six-port network analyzers; six-port reflectometers; two-port devices; Attenuators; Diodes; Envelope detectors; Equations; Power generation; Power measurement; Reflection; Testing; Thermistors; Voltage;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
