Title :
An Integrated Patch-Clamp Potentiostat With Electrode Compensation
Author :
Weerakoon, P. ; Culurciello, E. ; Klemic, K.G. ; Sigworth, F.J.
Author_Institution :
Electr. Eng. Dept., Yale Univ., New Haven, CT
fDate :
4/1/2009 12:00:00 AM
Abstract :
We present the first fully integrated implementation of a patch-clamp measurement system with series-access resistance and parasitic capacitive compensation capability. The system was implemented in a 0.5- mum silicon-on-sapphire process and is capable of recording cell membrane currents up to plusmn20 nA, with an rms noise of 5 pA at 10-kHz bandwidth. The system can compensate for the capacitance and resistance of the electrode, up to 20 pF and up to 70% of the series-access resistance, respectively. The die size is 1150 by 700 mum. The power consumption is 300 muW at 3.3 V. The integrated patch-clamp system will be used to fabricate high-throughput planar patch-clamp systems.
Keywords :
bioelectric phenomena; biomedical electrodes; biomedical measurement; biomembranes; biosensors; cellular biophysics; drug delivery systems; noise; power consumption; silicon-on-insulator; Si-Al2O3; biosensor; cell membrane currents; current 20 nA; drug testing; electrode compensation; frequency 10 kHz; high-throughput planar patch-clamp systems; integrated patch-clamp potentiostat; low-noise amplification; parasitic capacitive compensation; power 300 muW; power consumption; rms noise; series-access resistance; silicon-on-sapphire process; size 0.5 mum; size 1150 mum; size 700 mum; voltage 3.3 V; Biomedical measurements; Biomembranes; Cells (biology); Clamps; Current measurement; Electrical resistance measurement; Electrodes; Immune system; Integrated circuit measurements; Parasitic capacitance; Biosensor; current measurements; drug testing; high-throughput system; low-noise amplification; patch-clamp measurements; potentiostat; silicon-on-sapphire (SOS);
Journal_Title :
Biomedical Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TBCAS.2008.2005419
