Title :
A 40-gb/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder Modulator with a drive Voltage of 2.3 V
Author :
Tsuzuki, Ken ; Ishibashi, Takayuki ; Ito, Takao ; Oku, S. ; Shibata, Yoshitaka ; Ito, Takao ; Iga, R. ; Kondo, Yuta ; Tohmori, Y.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
Abstract :
We have developed a traveling-wave Mach-Zehnder modulator using an n-i-n heterostructure fabricated on an InP substrate. We obtained an extremely small π voltage (Vπ) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed that the device has an impedance-matched electrode and operates at 40 Gb/s with a single-ended drive voltage of 2.3 V.
Keywords :
aluminium compounds; electro-optical effects; electro-optical modulation; electrodes; gallium compounds; impedance matching; indium compounds; optical fibre communication; semiconductor devices; semiconductor quantum wells; 2.2 V; 2.3 V; 3 mm; 40 Gbit/s; InGaAlAs-InAlAs MQW; InGaAlAs-InAlAs-InP; InP; InP substrate; Mach-Zehnder modulator; electro-optic effect; high-bit-rate transmission systems; impedance-matched electrode; n-i-n heterostructure; semiconductor devices; short signal electrode; single-ended drive voltage; traveling-wave modulator; Chirp modulation; Electrodes; Indium tin oxide; Optical interferometry; Optical losses; Optical modulation; Optical waveguides; PIN photodiodes; Quantum well devices; Voltage; Electrooptic effect; InP; Mach–Zehnder; electrorefractive effect; isotype heterostructure; optical modulator; semiconductor devices;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.836900
