Suppression of Higher Order Transverse and Oxide Modes in 1.3-μm InGaAs VCSELs by an Inverted Surface Relief

Author

Söderberg, Emma ; Gustavsson, Johan S. ; Modh, Peter ; Larsson, Anders ; Zhang, Zhenzhong ; Berggren, Jesper ; Hammar, Mattias

Author_Institution

Dept. of Microtechnology & Nanoscience, Chalmers Univ., Gothenburg

Volume

19

Issue

5

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

327

Lastpage

329

Abstract

It is shown, by a systematic variation of design parameters, that the use of an inverted surface relief is very effective for suppressing higher order transverse modes in oxide confined 1.3-mum InGaAs vertical-cavity surface-emitting lasers (VCSELs). Single-mode emission is achieved for a large variety of oxide aperture and surface relief diameters, with optimum designs, having a surface relief with a diameter half of that of the oxide aperture, producing 1.1-1.3 mW of single-mode power. It is also shown that the anti-phase layer employed to enable the use of an inverted surface relief is effective for suppressing oxide modes that otherwise appear in oxide confined VCSELs with a large detuning between the gain peak and the cavity resonance

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor lasers; surface emitting lasers; 1.1 to 1.3 mW; 1.3 mum; InGaAs; InGaAs VCSEL; higher order transverse modes; inverted surface relief; oxide modes; vertical-cavity surface-emitting lasers; Apertures; Fiber lasers; Indium gallium arsenide; Laser modes; Optical fiber networks; Optical fiber testing; Optical surface waves; Resonance; Surface emitting lasers; Vertical cavity surface emitting lasers; InGaAs; inverted surface relief; single mode; vertical- cavity surface-emitting laser (VCSEL);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.891631

Filename

4116750