Title :
High-power highly reliable 1.06 μm InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers [MOVPE]
Author :
Yuda, M. ; Temmyo, J. ; Sasaki, T. ; Sugo, M. ; Amano, C.
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fDate :
4/17/2003 12:00:00 AM
Abstract :
High output power of about 800 mW in a chip and stable operation for over 14 000 h under 225 mW at 50°C have been achieved in 1.06 μm InGaAs strained-quantum-well laser diodes, which were realised by low-temperature growth of the InGaAs well layers.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 1.06 micron; 225 mW; 50 degC; 800 mW; InGaAs; low-temperature growth; metal organic vapour phase epitaxy; output power; stable operation; strained-quantum-well laser diodes; well layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030455
