• DocumentCode
    1193928
  • Title

    Electrical properties of 1.55 μm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime

  • Author

    Mangeney, J. ; Joulaud, L. ; Decobert, Jean ; Lourtioz, J.-M. ; Cabaret, S. ; Crozat, P.

  • Author_Institution
    Inst. d´Electronique Fondamentale, Univ. Paris-Sud, Orsay, France
  • Volume
    39
  • Issue
    8
  • fYear
    2003
  • fDate
    4/17/2003 12:00:00 AM
  • Firstpage
    681
  • Lastpage
    682
  • Abstract
    Carrier lifetimes as short as 270 fs with carrier mobility of 200 cm2/V/s and good performances in terms of layer resistivity have been obtained from ion-irradiated InGaAs. The residual carrier concentration measured in Hall effect experiments was found to be weakly modified in spite of the high defect concentration created by the ion bombardment. Ion-irradiated InGaAs appears to be specially adapted to fast photoconductive devices operating at optical communication wavelengths.
  • Keywords
    Hall effect; III-V semiconductors; carrier density; carrier lifetime; carrier mobility; electrical resistivity; gallium arsenide; indium compounds; ion beam effects; photoconducting materials; 1.55 micron; 270 fs; Hall effect; InGaAs; InGaAs layer; carrier mobility; defect concentration; electrical resistivity; ion irradiation; optical communication wavelength; residual carrier concentration; subpicosecond carrier lifetime; ultrafast photoconductive device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030441
  • Filename
    1198001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1193928