DocumentCode :
1194102
Title :
Applications of single-wafer rapid-thermal processing to the manufacture of advanced flash memory
Author :
Chen, Kuang-Chao ; Shih, Hsueh-Hao ; Hwang, Yaw-Lin ; Hsueh, Cheng-Chen ; Chung, Henry ; Pan, Sam ; Lu, Chih-Yuan
Author_Institution :
Si Lab., Macronix Int. Co. Ltd., Hsinchu, Taiwan
Volume :
16
Issue :
2
fYear :
2003
fDate :
5/1/2003 12:00:00 AM
Firstpage :
128
Lastpage :
137
Abstract :
The application of single-wafer processing in semiconductor manufacturing has long been touted as the most effective way in reducing cycle time in a production environment as well as shortening the learning cycle for process development. However, one of the bottle neck areas is in the diffusion module in which conventional furnace processes are difficult to replace due to their superior film quality and high throughput. Recently, significant progress has been made in the areas of rapid thermal oxidation (RTO) and low-pressure chemical vapor deposition (LPCVD) such that high quality films of oxide, nitride, and polysilicon were achieved with great improvement in manufacturing cycle time. In this paper, nonvolatile memory devices such as flash EPROM will be used as examples to illustrate the effective applications of RTO and single-wafer LPCVD processes.
Keywords :
chemical vapour deposition; flash memories; integrated circuit manufacture; integrated memory circuits; isolation technology; oxidation; rapid thermal processing; RTO; Si; advanced flash memory; chemical vapor deposition processes; diffusion module; flash EPROM; flash memory manufacture; floating gate polysilicon; high quality films; low-pressure LPCVD; nonvolatile memory devices; production environment; rapid thermal oxidation; semiconductor manufacturing; shallow trench isolation; single-wafer LPCVD processes; single-wafer RTP; single-wafer rapid-thermal processing; tunnel oxide; Chemical vapor deposition; Flash memory; Furnaces; Manufacturing processes; Neck; Oxidation; Production; Rapid thermal processing; Semiconductor device manufacture; Throughput;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2003.810942
Filename :
1198019
Link To Document :
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