Title :
Contrasting single-wafer and batch processing for memory devices
Author :
Weimer, Ronald A. ; Eppich, Denise Marra ; Beaman, Kevin L. ; Powell, D. Carl ; González, Fernando
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
fDate :
5/1/2003 12:00:00 AM
Abstract :
Single-wafer technology has been shown to improve memory device performance and ultimately improve product yield for several front-end-of-line (FEOL) processes. Single-wafer processes that are reviewed include silicon nitride for word-line cap, flash oxide-nitride-oxide dielectric, cell dielectric re-oxidation, and selective oxidation.
Keywords :
batch processing (industrial); integrated circuit manufacture; integrated memory circuits; nitridation; oxidation; plasma CVD; rapid thermal processing; FEOL processes; RTA; RTP; batch processing; cell dielectric; flash oxide-nitride-oxide dielectric; front-end-of-line processes; memory device manufacturing; plasma CVD; product yield; rapid thermal annealing; rapid thermal processing; re-oxidation; selective oxidation; semiconductor manufacturing; single-wafer processing; word-line cap; Chemical technology; Costs; Dielectrics; Plasma chemistry; Plasma devices; Plasma materials processing; Random access memory; Rapid thermal annealing; Rapid thermal processing; Silicon;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2003.810939
