DocumentCode
1194168
Title
Mismatch in diffusion resistors caused by photolithography
Author
Hausser, Stefan ; Majoni, Stefan ; Schligtenhorst, Holger ; Kolwe, Georg
Author_Institution
Philips Semicond. GmbH, Boeblingen, Germany
Volume
16
Issue
2
fYear
2003
fDate
5/1/2003 12:00:00 AM
Firstpage
181
Lastpage
186
Abstract
During the qualification of a 0.35-μm CMOS process, it was observed that diffusion resistors showed a systematic mismatch, depending on the position on the wafer. The mismatch increased from the center of the wafer to the outer regions. Various experiments showed that the mismatch was caused by spinning the wafer during the resist development process. Changing this process eliminated the systematic diffusion resistor mismatch.
Keywords
CMOS integrated circuits; diffusion; photolithography; resistors; 0.35 micron; CMOS process; diffusion resistor; photolithography; resist development; systematic mismatch; wafer spinning; CMOS process; Contact resistance; Electrical resistance measurement; Immune system; Lithography; Metallization; Qualifications; Resistors; Silicon; Testing;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2003.811584
Filename
1198026
Link To Document