DocumentCode
1194241
Title
Metallization proximity studies for copper spiral inductors on silicon
Author
Sia, Choon Beng ; Yeo, Kiat Seng ; Do, Manh Anh ; Ma, Jian-Guo
Author_Institution
Adv. RFIC (S) Pic. Ltd., Singapore, Singapore
Volume
16
Issue
2
fYear
2003
fDate
5/1/2003 12:00:00 AM
Firstpage
220
Lastpage
227
Abstract
The impacts of metallization proximity for copper spiral inductors on silicon have been investigated in this paper. Performance of the spiral inductor versus area consumption tradeoff with respect to its core diameter is evaluated quantitatively for the first time. Effects of the inductor´s proximate grounded metallization on its overall inductive performance are also analyzed.
Keywords
Q-factor; copper; eddy currents; inductance; inductors; integrated circuit metallisation; integrated circuit testing; radiofrequency integrated circuits; Cu spiral inductors; Cu-Si; RF integrated circuits; Si; area consumption tradeoff; core diameter; eddy-current resistance; inductance; inductive performance; inductor performance; metallization proximity; proximate grounded metallization; quality factor; series resistance; Conductors; Copper; Inductance; Inductors; Metallization; Q factor; Radio frequency; Silicon; Spirals; Testing;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2003.811574
Filename
1198032
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