Test structures for analyzing proton radiation effects in bipolar technologies

Author

Barnaby, Hugh J. ; Schrimpf, Ronald D. ; Galloway, Kenneth F. ; Ball, Dennis R. ; Pease, Ronald L. ; Fouillat, Pascal

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Arizona, Tucson, AZ, USA

Volume

16

Issue

2

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

253

Lastpage

258

Abstract

Structures integrated onto a BiCMOS test chip are specially designed to characterize the complex mechanisms related to proton radiation response in bipolar technologies. Bipolar devices from a commercial process are modified to include independent gate terminals. Through the use of gate control, the effects of proton-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative description of the nonlinear relationship between the radiation defects and electrical response at both the device and circuit level.

Keywords

BiCMOS analogue integrated circuits; bipolar transistors; integrated circuit testing; interface states; proton effects; semiconductor device testing; surface recombination; BiCMOS test chip; analog bipolar circuits; bipolar junction transistors; bipolar technologies; bulk traps; discrete bipolar devices; displacement damage; electrical response; gate control; independent gate terminals; input bias current; interface traps; nonlinear relationship; oxide trapped charge; proton radiation effects analysis; proton radiation response; proton-induced defects; surface recombination; test structures; BiCMOS integrated circuits; Bipolar transistors; Circuit analysis; Circuit testing; Degradation; Integrated circuit technology; Ionizing radiation; Proton radiation effects; Radiative recombination; System testing;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2003.811941

Filename

1198037