DocumentCode :
1194394
Title :
Thermal stress analysis for rapid thermal processor
Author :
Chao, Ching-Kong ; Hung, Shih-Yu ; Yu, Cheng-Ching
Author_Institution :
Dept. of Mech. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Volume :
16
Issue :
2
fYear :
2003
fDate :
5/1/2003 12:00:00 AM
Firstpage :
335
Lastpage :
341
Abstract :
Within the framework of linearized thermoelasticity theory, the temperature and thermal stresses on the wafer for the rapid thermal processor are solved by using the finite-difference approach and a trapezoidal integration technique, respectively. Although the equations governing the present thermoelastic system are coupled in nature, the temperature can still be obtained independently due to the fact that the coupling term is negligible as a result of the strain rate being extremely small as compared with unity. Based on the maximum shear stress failure criterion, the calculated results show that material failure always occurs at the edge of the wafer at the beginning of cooling processes. Furthermore, the maximum stress control scheme is proved to be more efficient that it can significantly reduce the required cooling time and thermal budgets. Thus, the conventional constant cooling-rate control scheme or linear temperature ramp-down scheme is not appropriate for the rapid thermal processor.
Keywords :
failure analysis; finite difference methods; integration; rapid thermal processing; semiconductor process modelling; temperature distribution; thermal stresses; thermoelasticity; cooling processes; cooling time; finite-difference approach; linearized thermoelasticity theory; material failure; maximum shear stress failure criterion; maximum stress control scheme; rapid thermal processor; strain rate; temperature analysis; temperature distribution; thermal budgets; thermal stress analysis; trapezoidal integration technique; Chaos; Compressive stress; Cooling; Heating; Rapid thermal processing; Stress control; Temperature control; Tensile stress; Thermal stresses; Thermoelasticity;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2003.811884
Filename :
1198047
Link To Document :
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