Title :
ZnSe based white light emitting diode on homoepitaxial ZnSe substrate
Author :
Chang, S.J. ; Lin, T.K. ; Chiou, Y.Z. ; Huang, B.R. ; Chang, S.P. ; Chang, C.M. ; Lin, Y.C. ; Wong, C.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
fDate :
2/1/2007 12:00:00 AM
Abstract :
ZnSe-based white light emitting diodes (LEDs) were homoepitaxially prepared on ZnSe substrates by molecular beam epitaxy. It was found to be possible to simultaneously observe the greenish-blue emission at 483 nm originating from the epitaxial layer and the weaker ZnSe substrate-related orange emission centred at around 595 nm. It was found that the emission wavelength of the LED and the measured chromaticity coordinate were almost independent of the injected current. It was also found that the turn-on voltage and the 20 mA operation voltage of the fabricated LED were 2.25 and 4 V, respectively
Keywords :
II-VI semiconductors; light emitting diodes; molecular beam epitaxial growth; zinc compounds; 2.25 V; 20 mA; 4 V; 483 nm; 595 nm; ZnSe; ZnSe based white light emitting diode; chromaticity coordinate; epitaxial layer; homoepitaxial ZnSe substrate; homoepitaxially prepared; molecular beam epitaxy; operation voltage; substrate-related orange emission; turn-on voltage;
Journal_Title :
Optoelectronics, IET
DOI :
10.1049/iet-opt:20060025
