GaN-based light-emitting diodes prepared on vicinal sapphire substrates

Author

Lin, J.C. ; Su, Y.K. ; Chang, S.J. ; Lan, W.H. ; Huang, K.C. ; Chen, W.R. ; Cheng, Y.C. ; Lin, W.J.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

1

Issue

1

fYear

2007

fDate

2/1/2007 12:00:00 AM

Firstpage

23

Lastpage

26

Abstract

Thin InGaN epitaxial layers and GaN-based light-emitting diodes (LEDs) on conventional and vicinal cut sapphire substrates are prepared. It is found that indium atoms are distributed much more uniformly in the samples prepared on vicinal cut sapphire substrates. It is also found that stronger electroluminescence intensity can be achieved without the band-filling effect of localised states from the LEDs with vicinal cut sapphire substrate. With 20 mA current injection, it is found that 44% electroluminescence intensity enhancement can be achieved by using the 1deg tilted sapphire substrate

Keywords

III-V semiconductors; electroluminescence; gallium compounds; light emitting diodes; sapphire; substrates; 20 mA; GaN; GaN-based light-emitting diodes; InGaN; LEDs; band-filling effect; electroluminescence intensity; electroluminescence intensity enhancement; indium atoms; localised states; thin InGaN epitaxial layers; tilted sapphire substrate; vicinal cut sapphire substrates; vicinal sapphire substrates;

fLanguage

English

Journal_Title

Optoelectronics, IET

Publisher

iet

ISSN

1751-8768

Type

jour

DOI

10.1049/iet-opt:20060031

Filename

4117442