Optical gain of 1.3 μm GaAsSbN/GaAs quantum well lasers

Author

Park, S.-H.

Author_Institution

Dept. of Electron. Eng., Catholic Univ. of Daegu, Kyeongbuk

Volume

1

Issue

1

fYear

2007

fDate

2/1/2007 12:00:00 AM

Firstpage

42

Lastpage

46

Abstract

Optical gain of 1.3 mum GaAsSbN/GaAs quantum well (QW) structure is investigated using the multiband effective mass theory. The results are compared with those of 1.3 mum InGaNAs/GaAs and GaAsSb/GaAs QW structures. The optical gain of the GaAsSbN/GaAs QW structure is found to be similar to that of the InGaAsN/GaAs QW structure. In contrast, GaAsSbN/GaAs and InGaNAs/GaAs QW structures show significantly larger optical gain than the GaAsSb/GaAs QW structure. This is mainly attributed to the fact that the former has a larger optical matrix element than the latter. In addition, GaAsSbN/GaAs and InGaNAs/GaAs QW structures have much smaller threshold current density than the GaAsSb/GaAs QW structure. This is because the Auger recombination current density gives dominant contribution to the threshold current density and the former has smaller threshold carrier density than the latter. On the contrary, the threshold current density of the GaAsSbN/GaAs QW structure is shown to be similar to that of the InGaAsN/GaAs QW structure

Keywords

Auger effect; III-V semiconductors; current density; effective mass; electron-hole recombination; gallium arsenide; quantum well lasers; 1.3 micron; Auger recombination current density; GaAsSbN-GaAs; GaAsSbN/GaAs quantum well lasers; multiband effective mass theory; optical gain; optical matrix element; threshold current density;

fLanguage

English

Journal_Title

Optoelectronics, IET

Publisher

iet

ISSN

1751-8768

Type

jour

DOI

10.1049/iet-opt:20060058

Filename

4117443