Computationally efficient and accurate capacitance model for the GaAs MESFET for microwave nonlinear circuit design

Author

Tellez, J Rodriguez ; Mezher, K. ; Al-Daas, M.

Author_Institution

Dept. of Electr. & Electron. Eng., Bradford Univ., UK

Volume

13

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

1489

Lastpage

1497

Abstract

A new equation for simulating the bias dependency of the gate-source and gate-drain capacitances of the GaAs MESFET is presented and compared with existing techniques. It provides increased accuracy for microwave circuit design applications and substantial savings in CPU execution speed over existing techniques. The new empirical relation is applied successfully to a wide range of silicon and GaAs devices

Keywords

III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; capacitance; circuit CAD; field effect MMIC; gallium arsenide; integrated circuit design; nonlinear network synthesis; semiconductor device models; CPU execution speed; GaAs; GaAs MESFET; bias dependency; capacitance model; empirical relation; gate-drain capacitances; gate-source capacitances; microwave nonlinear circuit design; Capacitance; Circuit simulation; Circuit synthesis; Computational modeling; Equations; Gallium arsenide; MESFETs; Microwave devices; Microwave theory and techniques; Silicon;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.331406

Filename

331406