Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

Author

Kimoto, T. ; Kosugi, H. ; Suda, J. ; Kanzaki, Y. ; Matsunami, H.

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan

Volume

52

Issue

1

fYear

2005

Firstpage

112

Lastpage

117

Abstract

Design and fabrication of lateral SiC reduced surface field (RESURF) MOSFETs have been investigated. The doping concentration (dose) of the RESURF and lightly doped drain regions has been optimized to reduce the electric field crowding at the drain edge or in the gate oxide by using device simulation. The optimum oxidation condition depends on the polytype: N/sub 2/O oxidation at 1300/spl deg/C seems to be suitable for 4H-SiC, and dry O/sub 2/ oxidation at 1250/spl deg/C for 6H-SiC. The average inversion-channel mobility is 22, 78, and 68 cm/sup 2//Vs for 4H-SiC(0001), (112~0), and 6H-SiC(0001) MOSFETs, respectively. RESURF MOSFETs have been fabricated on 10-/spl mu/m-thick p-type 4H-SiC(0001), (112~0), and 6H-SiC(0001) epilayers with an acceptor concentration of 1/spl times/10/sup 16/ cm/sup -3/. A 6H-SiC(0001) RESURF MOSFET with a 3-/spl mu/m channel length exhibits a high breakdown voltage of 1620 V and an on-resistance of 234 m/spl Omega//spl middot/cm/sup 2/. A 4H-SiC(112~0) RESURF MOSFET shows the characteristics of 1230 V-138 m/spl Omega//spl middot/cm/sup 2/.

Keywords

inversion layers; nitrogen compounds; oxidation; power MOSFET; power semiconductor devices; semiconductor doping; silicon compounds; wide band gap semiconductors; 10 micron; 1230 V; 1250 C; 1300 C; 1620 V; 3 micron; 4H-SiC(0001); 6H-SiC(0001); N/sub 2/O; RESURF MOSFET; SiC; device simulation; doping concentration; electric field; lateral reduced surface field MOSFET; lightly doped drain regions; optimum oxidation condition; power MOSFET; power device; Inversion layers; Nitrogen compounds; Oxidation; Power MOSFETs; Power semiconductor devices; Semiconductor device doping; Silicon compounds; Power device; power MOSFET; reduced surface field (RESURF); silicon carbide (SiC);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.841358

Filename

1372716