Title :
A model to study the effect of selective anodic oxidation on ultrathin gate oxides
Author :
Marathe, V.G. ; Paily, R. ; DasGupta, A. ; DasGupta, N.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Chennai, India
Abstract :
We have studied the effect of selective anodic oxidation on ultrathin (22-31 /spl Aring/) silicon dioxide grown at different temperatures ranging from 600/spl deg/C to 875/spl deg/C, on both p- and n-type substrates. A model based on the concept of filling of pinholes by selective anodic oxidation is presented to quantitatively explain the reduction in the gate leakage current of the MOS capacitors after selective anodic oxidation.
Keywords :
MOS capacitors; anodisation; leakage currents; semiconductor device models; silicon compounds; substrates; 22 to 31 /spl Aring/; 600 to 875 C; MOS capacitors; SiO/sub 2/; gate leakage current; n-type substrate; p-type substrate; pin holes; selective anodic oxidation; silicon dioxide; ultrathin gate oxides; Leakage currents; MOS capacitors; Semiconductor device modeling; Silicon compounds; Anodic oxidation; gate leakage current; gate oxide; metal-oxide-semiconductor (MOS) capacitors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.841284
