• DocumentCode
    1194669
  • Title

    Optimisation of a-factor for quantum dot InAs/GaAs fabry-perot lasers emitting at 1.3 μm

  • Author

    Cong, D.-Y. ; Martinez, A. ; Merghem, K. ; Moreau, G. ; Lemaitre, A. ; Provost, J.G. ; Gouezigou, O. Le ; Fischer, M. ; Krestnikov, I. ; Kovsh, A.R. ; Ramdane, A.

  • Author_Institution
    CNRS/Lab. de Photonique et de Nanostruct., Marcoussis
  • Volume
    43
  • Issue
    4
  • fYear
    2007
  • Firstpage
    222
  • Lastpage
    224
  • Abstract
    Dynamic measurements of the Henry factor alphaH of InAs/GaAs Fabry-Perot lasers are compared for 3-, 5- and 10-QD layers. While alphaH dramatically increases with the bias current for 3- and 5-QD stacks, it only amounts to <4 for the 10-layer stack at high currents, a value similar to that of QW-lasers
  • Keywords
    Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; semiconductor quantum dots; 1.3 micron; Henry factor; InAs-GaAs; alpha-factor; quantum dot Fabry-Perot lasers; quantum well lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20073633
  • Filename
    4117464
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1194669