• DocumentCode
    1194936
  • Title

    Mobility of strained and dislocated InxGa1-xAs semiconductor material

  • Author

    Kuhn, Kelin J. ; Darling, Robert B.

  • Author_Institution
    Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
  • Volume
    39
  • Issue
    6
  • fYear
    1992
  • fDate
    6/1/1992 12:00:00 AM
  • Firstpage
    1288
  • Lastpage
    1294
  • Abstract
    A theoretical investigation of low-field electron transport properties in thick layers of partially strain-relieved lattice-mismatched InxGa1-xAs on GaAs semiconductor material is performed. The results indicate that room-temperature improvements in low-field mobility with increasing indium concentration are possible, but only occur if the density of misfit dislocations can be held below a critical value
  • Keywords
    III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; InxGa1-xAs; InxGa1-xAs-GaAs; density of misfit dislocations; lattice-mismatched; low-field electron transport properties; low-field mobility; semiconductors; strained semiconductor material; Atomic layer deposition; Capacitive sensors; Crystalline materials; Crystallization; Electrons; Gallium arsenide; Indium; Lattices; MESFETs; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.137306
  • Filename
    137306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1194936