DocumentCode
1194950
Title
High frequency effects in MOSFET-CTow - Thomas biquads
Author
Shi, Bing-Xue ; Khoury, John ; Tsividis, Yannis
Volume
33
Issue
6
fYear
1986
fDate
6/1/1986 12:00:00 AM
Firstpage
648
Lastpage
651
Abstract
The MOSFET- 
version of the Tow-Thomas activeRC biquadratic filter operated at high frequencies is considered. Formulas for the deviation of quality factor and center frequency due to the finite gain-bandwidth product of the op amps and the intrinsic distributed- RC effects of the MOS transistors are presented and verified by computer simulation. Passive compensation methods are considered for eliminating the degradation of filter performance due to the above effects.
version of the Tow-Thomas activeRC biquadratic filter operated at high frequencies is considered. Formulas for the deviation of quality factor and center frequency due to the finite gain-bandwidth product of the op amps and the intrinsic distributed- RC effects of the MOS transistors are presented and verified by computer simulation. Passive compensation methods are considered for eliminating the degradation of filter performance due to the above effects.Keywords
Biquadratic filters; Distributed-parameter circuits, RC; MOS integrated circuits, analog; Active filters; Capacitance; Circuit analysis computing; Circuits and systems; Frequency measurement; MOSFET circuits; Operational amplifiers; Q factor; Resistors; Voltage;
fLanguage
English
Journal_Title
Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0098-4094
Type
jour
DOI
10.1109/TCS.1986.1085957
Filename
1085957
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