• DocumentCode
    1195022
  • Title

    Theoretical analysis of the influences of barrier-enhancement layers on transient responses of MSM photodetectors

  • Author

    Sano, Eiichi

  • Author_Institution
    NTT LSI Labs., Atsugi, Japan
  • Volume
    39
  • Issue
    6
  • fYear
    1992
  • fDate
    6/1/1992 12:00:00 AM
  • Firstpage
    1355
  • Lastpage
    1362
  • Abstract
    Transient responses of In0.53Ga0.47As MSM PDs with abrupt and graded barrier-enhancement layers are simulated by using an ensemble Monte Carlo technique. The effect of the graded layer on transient responses and an appropriate graded-layer thickness for achieving fast responses are discussed. Also, a relevant device scaling law is proposed for In0.53Ga0.,47As MSM PDs with graded barrier-enhancement layers
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor device models; In0.53Ga0.47As; MSM photodetectors; Monte Carlo technique; abrupt barriers; analysis; barrier-enhancement layers; device scaling law; graded barrier-enhancement layers; graded layer; semiconductors; transient responses; Acoustic materials; Dark current; Dielectric materials; Gallium arsenide; Indium phosphide; Monte Carlo methods; Optical devices; Optical materials; Phonons; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.137315
  • Filename
    137315
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1195022