DocumentCode
1195192
Title
Investigation of the physical modeling of the gate-depletion effect
Author
Habas, Predrag ; Faricelli, John V.
Author_Institution
Inst. for Microelectron., Tech. Univ., Vienna, Austria
Volume
39
Issue
6
fYear
1992
fDate
6/1/1992 12:00:00 AM
Firstpage
1496
Lastpage
1500
Abstract
The physical modeling of the gate for the analysis of the gate-depletion effect is investigated. The accuracy of the assumed rigid-parabolic-band model is examined by comparing the numerical simulation with the experimental C -V data. Disagreement between calculation and measurement is observed and physical phenomena which may be responsible for it are proposed. An engineering approach to remove the disagreement is given. The presented investigations may be of general interest for modeling of heavily doped space-charge regions
Keywords
capacitance; doping profiles; heavily doped semiconductors; insulated gate field effect transistors; semiconductor device models; C-V characteristics; MINIMOS; MOSFET; doping concentrations; gate-depletion effect; heavily doped space-charge regions; numerical simulation; physical modeling; rigid-parabolic-band model; Capacitance; Capacitance-voltage characteristics; MOS devices; MOSFET circuits; Microelectronics; Numerical simulation; Semiconductor process modeling; Steady-state; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.137331
Filename
137331
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