Location of low-frequency noise sources in submicrometer bipolar transistors

Author

Kleinpenning, Theo G.M.

Author_Institution

Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands

Volume

39

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

1501

Lastpage

1506

Abstract

Expressions are derived for the low-frequency noise (1/f noise, shot noise, Nyquist noise) in bipolar transistors. Particular attention has been paid to the influence of the internal base and emitter series resistance. The expressions have been compared with experimental results from submicrometer silicon bipolar transistors. It is found at low forward currents that the 1/f noise is dominated by 1/f noise in the base current. At high-forward currents the 1/f noise probably stems from the 1/f noise in the internal base series resistance. How to locate the low-frequency noise sources is demonstrated theoretically by analyzing the results for the common-emitter and the common-collector configurations both at low and high currents and at different values of the external resistances

Keywords

bipolar transistors; electron device noise; random noise; semiconductor device models; 1/f noise; Nyquist noise; base current; common emitter configuration; common-collector configurations; emitter series resistance; internal base series resistance; low-frequency noise sources; shot noise; submicrometer bipolar transistors; Bipolar transistors; Contact resistance; Electric resistance; Fluctuations; Frequency; Heterojunction bipolar transistors; Low-frequency noise; Modems; Noise generators; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.137332

Filename

137332